Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Country of Origin
China
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BD 1.445
Each (In a Pack of 2) (Exc. Vat)
BD 1.589
Each (In a Pack of 2) (Including VAT)
2
BD 1.445
Each (In a Pack of 2) (Exc. Vat)
BD 1.589
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 1.445 | BD 2.890 |
10 - 98 | BD 1.235 | BD 2.470 |
100 - 248 | BD 0.985 | BD 1.970 |
250 - 498 | BD 0.975 | BD 1.950 |
500+ | BD 0.870 | BD 1.740 |
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
25 (Continuous) A, 40 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
SOT-93
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
4 V dc
Maximum Collector Cut-off Current
1mA
Height
20.35mm
Maximum Power Dissipation
125 W
Minimum Operating Temperature
-65 °C
Dimensions
15.2 x 4.9 x 20.35mm
Width
4.9mm
Maximum Operating Temperature
+150 °C
Length
15.2mm
Base Current
5A
Country of Origin
China