Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole
Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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BD 1.615
Each (In a Pack of 2) (Exc. Vat)
BD 1.777
Each (In a Pack of 2) (Including VAT)
2
BD 1.615
Each (In a Pack of 2) (Exc. Vat)
BD 1.777
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | BD 1.615 | BD 3.230 |
| 10 - 18 | BD 1.550 | BD 3.100 |
| 20 - 48 | BD 1.505 | BD 3.010 |
| 50 - 98 | BD 1.450 | BD 2.900 |
| 100+ | BD 1.425 | BD 2.850 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
Renesas ElectronicsMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±30V
Maximum Power Dissipation
40 W
Package Type
TO-220FL
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Gate Capacitance
900pF
Maximum Operating Temperature
+150 °C
Country of Origin
Japan
Product details
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products