Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
BD 2.750
BD 0.028 Each (In a Pack of 100) (Exc. Vat)
BD 3.025
BD 0.031 Each (In a Pack of 100) (inc. VAT)
Standard
100
BD 2.750
BD 0.028 Each (In a Pack of 100) (Exc. Vat)
BD 3.025
BD 0.031 Each (In a Pack of 100) (inc. VAT)
Standard
100
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Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
100 - 400 | BD 0.028 | BD 2.750 |
500 - 900 | BD 0.028 | BD 2.750 |
1000 - 2400 | BD 0.022 | BD 2.200 |
2500 - 4900 | BD 0.022 | BD 2.200 |
5000+ | BD 0.022 | BD 2.200 |
Technical Document
Specifications
Brand
ROHMChannel Type
P
Maximum Continuous Drain Current
200 mA
Maximum Drain Source Voltage
20 V
Series
RU1C002ZP
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
150 mW
Maximum Gate Source Voltage
-10 V, +10 V
Width
1.35mm
Number of Elements per Chip
1
Length
2.1mm
Typical Gate Charge @ Vgs
1.4 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Product details