Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Product details
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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Please check again later.
BD 3.510
Each (In a Pack of 2) (Exc. Vat)
BD 3.861
Each (In a Pack of 2) (Including VAT)
2
BD 3.510
Each (In a Pack of 2) (Exc. Vat)
BD 3.861
Each (In a Pack of 2) (Including VAT)
2
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
2 - 8 | BD 3.510 | BD 7.020 |
10+ | BD 2.925 | BD 5.850 |
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
1700 V
Series
SCT2H12NZ
Package Type
TO-3PFM
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +22 V
Transistor Material
Si
Length
16mm
Typical Gate Charge @ Vgs
14 nC @ 18 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
21mm
Forward Diode Voltage
4.3V
Product details