ROHM SiC N-Channel MOSFET, 93 A, 650 V, 3-Pin TO-247N SCT3022ALGC11
Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
93 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247N
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
262 W
Transistor Configuration
Single
Maximum Gate Source Voltage
22 V
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
133 nC @ 18 V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Height
21mm
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BD 31.504
BD 31.504 Each (Exc. Vat)
BD 34.654
BD 34.654 Each (inc. VAT)
1
BD 31.504
BD 31.504 Each (Exc. Vat)
BD 34.654
BD 34.654 Each (inc. VAT)
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 31.504 |
| 5 - 9 | BD 30.674 |
| 10 - 24 | BD 29.887 |
| 25+ | BD 29.546 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
ROHMChannel Type
N
Maximum Continuous Drain Current
93 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247N
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
29 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
262 W
Transistor Configuration
Single
Maximum Gate Source Voltage
22 V
Number of Elements per Chip
1
Width
5mm
Length
16mm
Typical Gate Charge @ Vgs
133 nC @ 18 V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Height
21mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products