Semikron Danfoss SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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BD 165.643
BD 165.643 Each (Exc. Vat)
BD 182.207
BD 182.207 Each (inc. VAT)
Standard
1
BD 165.643
BD 165.643 Each (Exc. Vat)
BD 182.207
BD 182.207 Each (inc. VAT)
Standard
1
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Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 165.643 |
| 2 - 3 | BD 149.079 |
| 4 - 5 | BD 134.668 |
| 6 - 7 | BD 123.160 |
| 8+ | BD 112.602 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
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Technical Document
Specifications
Brand
Semikron DanfossMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products