Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
BD 98.763
BD 98.763 Each (Exc. Vat)
BD 108.639
BD 108.639 Each (inc. VAT)
Standard
1
BD 98.763
BD 98.763 Each (Exc. Vat)
BD 108.639
BD 108.639 Each (inc. VAT)
Standard
1
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 98.763 |
| 2 - 3 | BD 88.882 |
| 4 - 5 | BD 80.866 |
| 6 - 7 | BD 73.999 |
| 8+ | BD 67.720 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products