Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
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BD 92.265
Each (Exc. Vat)
BD 101.491
Each (Including VAT)
Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Select packaging type
1
BD 92.265
Each (Exc. Vat)
BD 101.491
Each (Including VAT)
Semikron SKM150GB12F4G Half Bridge IGBT Transistor Module, 150 A 1200 V
Stock information temporarily unavailable.
Select packaging type
1
Buy in bulk
| quantity | Unit price |
|---|---|
| 1 - 1 | BD 92.265 |
| 2 - 3 | BD 83.040 |
| 4 - 5 | BD 74.735 |
| 6 - 7 | BD 67.260 |
| 8+ | BD 61.445 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products