Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
BD 109.180
Each (Supplied in a Box) (Exc. Vat)
BD 120.098
Each (Supplied in a Box) (Including VAT)
Semikron SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Select packaging type
1
BD 109.180
Each (Supplied in a Box) (Exc. Vat)
BD 120.098
Each (Supplied in a Box) (Including VAT)
Semikron SKM200GB12F4 Half Bridge IGBT Transistor Module, 200 A 1200 V
Stock information temporarily unavailable.
Select packaging type
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 1 | BD 109.180 |
2 - 3 | BD 98.260 |
4 - 5 | BD 88.435 |
6 - 7 | BD 79.595 |
8+ | BD 72.470 |
Technical Document
Specifications
Brand
SemikronMaximum Continuous Collector Current
200 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±15.0V
Number of Transistors
2
Configuration
Half Bridge