Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
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Stock information temporarily unavailable.
BD 225.420
BD 0.075 Each (On a Reel of 3000) (Exc. Vat)
BD 247.962
BD 0.083 Each (On a Reel of 3000) (inc. VAT)
3000
BD 225.420
BD 0.075 Each (On a Reel of 3000) (Exc. Vat)
BD 247.962
BD 0.083 Each (On a Reel of 3000) (inc. VAT)
Stock information temporarily unavailable.
3000
| Quantity | Unit price | Per Reel |
|---|---|---|
| 3000 - 3000 | BD 0.075 | BD 225.420 |
| 6000 - 6000 | BD 0.069 | BD 208.080 |
| 9000 - 21000 | BD 0.058 | BD 173.400 |
| 24000+ | BD 0.058 | BD 173.400 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
-2A
Maximum Collector Emitter Voltage Vceo
-60V
Package Type
SOT-23
Mount Type
Surface
Transistor Configuration
Single
Maximum Collector Base Voltage VCBO
-60V
Maximum Power Dissipation Pd
500mW
Transistor Polarity
PNP
Minimum DC Current Gain hFE
45
Maximum Emitter Base Voltage VEBO
-5V
Minimum Operating Temperature
-65°C
Pin Count
3
Maximum Operating Temperature
150°C
Length
3.04mm
Height
1.4mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The device in a PNP transistor manufactured using new PB-HCD (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
