Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
Please check again later.
BD 0.310
Each (Exc. Vat)
BD 0.341
Each (Including VAT)
1
BD 0.310
Each (Exc. Vat)
BD 0.341
Each (Including VAT)
1
Buy in bulk
quantity | Unit price |
---|---|
1 - 49 | BD 0.310 |
50 - 99 | BD 0.300 |
100 - 249 | BD 0.275 |
250 - 499 | BD 0.265 |
500+ | BD 0.250 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
3 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
1.25 W
Minimum DC Current Gain
100, 40, 63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.