Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
350 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-3PF
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
300
Maximum Base Emitter Saturation Voltage
2.7 V
Maximum Collector Emitter Saturation Voltage
2 V
Minimum Operating Temperature
-65 °C
Height
15.2mm
Dimensions
15.7 x 5.7 x 15.2mm
Maximum Operating Temperature
+175 °C
Length
15.7mm
Width
5.7mm
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
BD 2.134
BD 2.134 Each (Exc. Vat)
BD 2.347
BD 2.347 Each (inc. VAT)
1
BD 2.134
BD 2.134 Each (Exc. Vat)
BD 2.347
BD 2.347 Each (inc. VAT)
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum Continuous Collector Current
15 A
Maximum Collector Emitter Voltage
350 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-3PF
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
300
Maximum Base Emitter Saturation Voltage
2.7 V
Maximum Collector Emitter Saturation Voltage
2 V
Minimum Operating Temperature
-65 °C
Height
15.2mm
Dimensions
15.7 x 5.7 x 15.2mm
Maximum Operating Temperature
+175 °C
Length
15.7mm
Width
5.7mm
Product details
NPN Darlington Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.