Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
BD 9.350
BD 0.187 Each (In a Tube of 50) (Exc. Vat)
BD 10.285
BD 0.206 Each (In a Tube of 50) (inc. VAT)
50
BD 9.350
BD 0.187 Each (In a Tube of 50) (Exc. Vat)
BD 10.285
BD 0.206 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.187 | BD 9.350 |
| 100+ | BD 0.182 | BD 9.075 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.15 x 10.4 x 4.6mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


