Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
BD 30.112
BD 0.402 Each (In a Tube of 75) (Exc. Vat)
BD 33.123
BD 0.442 Each (In a Tube of 75) (inc. VAT)
75
BD 30.112
BD 0.402 Each (In a Tube of 75) (Exc. Vat)
BD 33.123
BD 0.442 Each (In a Tube of 75) (inc. VAT)
Stock information temporarily unavailable.
75
| Quantity | Unit price | Per Tube |
|---|---|---|
| 75 - 75 | BD 0.402 | BD 30.112 |
| 150 - 300 | BD 0.302 | BD 22.688 |
| 375+ | BD 0.275 | BD 20.625 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
400 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
80 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
800 V
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


