Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
Please check again later.
BD 0.550
Each (In a Tube of 75) (Exc. Vat)
BD 0.605
Each (In a Tube of 75) (Including VAT)
75
BD 0.550
Each (In a Tube of 75) (Exc. Vat)
BD 0.605
Each (In a Tube of 75) (Including VAT)
75
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
75 - 75 | BD 0.550 | BD 41.250 |
150 - 150 | BD 0.415 | BD 31.125 |
225 - 450 | BD 0.400 | BD 30.000 |
525 - 900 | BD 0.350 | BD 26.250 |
975+ | BD 0.295 | BD 22.125 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
5 A
Maximum Collector Emitter Voltage
800 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
70 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Emitter Base Voltage
9 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.4 x 4.6 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.