Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
BD 23.100
BD 0.462 Each (In a Tube of 50) (Exc. Vat)
BD 25.410
BD 0.508 Each (In a Tube of 50) (inc. VAT)
50
BD 23.100
BD 0.462 Each (In a Tube of 50) (Exc. Vat)
BD 25.410
BD 0.508 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.462 | BD 23.100 |
| 100+ | BD 0.352 | BD 17.600 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


