Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
BD 3.685
BD 0.737 Each (In a Pack of 5) (Exc. Vat)
BD 4.053
BD 0.811 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.685
BD 0.737 Each (In a Pack of 5) (Exc. Vat)
BD 4.053
BD 0.811 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 0.737 | BD 3.685 |
| 10 - 95 | BD 0.627 | BD 3.135 |
| 100+ | BD 0.478 | BD 2.392 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
500 mA
Maximum Collector Emitter Voltage
450 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
12
Transistor Configuration
Single
Maximum Collector Base Voltage
1000 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.8 x 7.8 x 2.7mm
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


