Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
20 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
Stock information temporarily unavailable.
BD 15.125
BD 0.302 Each (In a Tube of 50) (Exc. Vat)
BD 16.637
BD 0.332 Each (In a Tube of 50) (inc. VAT)
50
BD 15.125
BD 0.302 Each (In a Tube of 50) (Exc. Vat)
BD 16.637
BD 0.332 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.302 | BD 15.125 |
| 100 - 200 | BD 0.231 | BD 11.550 |
| 250 - 450 | BD 0.231 | BD 11.550 |
| 500 - 950 | BD 0.204 | BD 10.175 |
| 1000+ | BD 0.176 | BD 8.800 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
20 A
Maximum Collector Emitter Voltage
80 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.15 x 10.4 x 4.6mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


