Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
BD 11.550
BD 0.231 Each (In a Tube of 50) (Exc. Vat)
BD 12.705
BD 0.254 Each (In a Tube of 50) (inc. VAT)
50
BD 11.550
BD 0.231 Each (In a Tube of 50) (Exc. Vat)
BD 12.705
BD 0.254 Each (In a Tube of 50) (inc. VAT)
50
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | BD 0.231 | BD 11.550 |
| 100 - 450 | BD 0.165 | BD 8.250 |
| 500 - 950 | BD 0.148 | BD 7.425 |
| 1000 - 1950 | BD 0.126 | BD 6.325 |
| 2000+ | BD 0.121 | BD 6.050 |
Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
PNP
Maximum DC Collector Current
-500 mA
Maximum Collector Emitter Voltage
-300 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
20.8 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Collector Base Voltage
300 V
Maximum Emitter Base Voltage
3 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.


