STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004

RS Stock No.: 880-5355Brand: STMicroelectronicsManufacturers Part No.: PD85004
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 13.365

BD 2.673 Each (In a Pack of 5) (Exc. Vat)

BD 14.701

BD 2.940 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004
Select packaging type

BD 13.365

BD 2.673 Each (In a Pack of 5) (Exc. Vat)

BD 14.701

BD 2.940 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-89 PD85004
Stock information temporarily unavailable.
Select packaging type

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QuantityUnit pricePer Pack
5 - 5BD 2.673BD 13.365
10 - 95BD 2.260BD 11.302
100 - 495BD 1.810BD 9.048
500 - 995BD 1.628BD 8.140
1000+BD 1.397BD 6.985

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-0.5 V, +15 V

Width

2.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

4.6mm

Maximum Operating Temperature

+150 °C

Height

0.44mm

Typical Power Gain

17 dB

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more