STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

RS Stock No.: 215-220Brand: STMicroelectronicsManufacturers Part No.: SCT012H90G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.8V

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Automotive Standard

AEC-Q101

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Stock information temporarily unavailable.

BD 25.724

BD 25.724 Each (Exc. Vat)

BD 28.296

BD 28.296 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

1

Available in multiples of 1
1BD 25.724
2BD 51.449
3BD 77.173
4BD 102.898
5BD 128.622
6BD 154.347
7BD 180.071
8BD 205.796
9BD 231.520
10BD 231.537
11BD 254.691
12BD 277.844
13BD 300.998
14BD 324.152
15BD 347.306

BD 25.724

BD 25.724 Each (Exc. Vat)

BD 28.296

BD 28.296 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
1BD 25.724
2BD 51.449
3BD 77.173
4BD 102.898
5BD 128.622
6BD 154.347
7BD 180.071
8BD 205.796
9BD 231.520
10BD 231.537
11BD 254.691
12BD 277.844
13BD 300.998
14BD 324.152
15BD 347.306

QuantityUnit price
1 - 9BD 25.724
10+BD 23.154

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.8V

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, AEC-Q101

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more