STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

RS Stock No.: 215-220Brand: STMicroelectronicsManufacturers Part No.: SCT012H90G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

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Stock information temporarily unavailable.

BD 27.436

BD 27.436 Each (Exc. Vat)

BD 30.180

BD 30.180 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

1

Available in multiples of 1
1BD 27.436
2BD 54.873
3BD 82.309
4BD 109.746
5BD 137.182
6BD 164.618
7BD 192.055
8BD 219.491
9BD 246.928
10BD 246.962
11BD 271.658
12BD 296.354
13BD 321.050
14BD 345.746
15BD 370.442

BD 27.436

BD 27.436 Each (Exc. Vat)

BD 30.180

BD 30.180 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 110 A, 900 V Enhancement, 7-Pin H2PAK-7 SCT012H90G3AG

Stock information temporarily unavailable.

1

Available in multiples of 1
1BD 27.436
2BD 54.873
3BD 82.309
4BD 109.746
5BD 137.182
6BD 164.618
7BD 192.055
8BD 219.491
9BD 246.928
10BD 246.962
11BD 271.658
12BD 296.354
13BD 321.050
14BD 345.746
15BD 370.442

QuantityUnit price
1 - 9BD 27.436
10+BD 24.696

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

900V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

138nC

Forward Voltage Vf

2.8V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more