STMicroelectronics SCT SiC N-Channel MOSFET, 110 A, 900 V, 4-Pin HiP247-4 SCT012W90G3-4AG
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
900 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
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BD 30.470
BD 30.470 Each (Exc. Vat)
BD 33.517
BD 33.517 Each (inc. VAT)
1
BD 30.470
BD 30.470 Each (Exc. Vat)
BD 33.517
BD 33.517 Each (inc. VAT)
1
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| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 30.470 |
| 5+ | BD 29.557 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
900 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products