STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG

RS Stock No.: 215-226Brand: STMicroelectronicsManufacturers Part No.: SCT018H65G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Through Hole

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

BD 15.592

BD 15.592 Each (Exc. Vat)

BD 17.151

BD 17.151 Each (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 15.592
2BD 31.185
3BD 46.778
4BD 62.370
5BD 77.962
6BD 93.555
7BD 109.148
8BD 124.740
9BD 140.332
10BD 141.900
11BD 156.090
12BD 170.280
13BD 184.470
14BD 198.660
15BD 212.850

BD 15.592

BD 15.592 Each (Exc. Vat)

BD 17.151

BD 17.151 Each (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 55 A, 650 V, 7-Pin H2PAK-7 SCT018H65G3AG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 15.592
2BD 31.185
3BD 46.778
4BD 62.370
5BD 77.962
6BD 93.555
7BD 109.148
8BD 124.740
9BD 140.332
10BD 141.900
11BD 156.090
12BD 170.280
13BD 184.470
14BD 198.660
15BD 212.850

Stock information temporarily unavailable.

Please check again later.

QuantityUnit price
1 - 9BD 15.592
10 - 99BD 14.190
100+BD 13.310

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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Through Hole

Pin Count

7

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more