Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247-4
Series
SCT
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
2.7V
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Country of Origin
China
Stock information temporarily unavailable.
BD 11.905
BD 11.905 Each (Exc. Vat)
BD 13.095
BD 13.095 Each (inc. VAT)
1
BD 11.905
BD 11.905 Each (Exc. Vat)
BD 13.095
BD 13.095 Each (inc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | BD 11.905 |
| 10 - 49 | BD 10.656 |
| 50 - 99 | BD 9.995 |
| 100+ | BD 9.695 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N channel
Maximum Continuous Drain Current Id
56A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247-4
Series
SCT
Mount Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
73nC
Maximum Power Dissipation Pd
388W
Maximum Gate Source Voltage Vgs
22 V
Minimum Operating Temperature
-55°C
Forward Voltage Vf
2.7V
Maximum Operating Temperature
175°C
Width
5.1 mm
Length
15.9mm
Height
25.27mm
Country of Origin
China


