STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

RS Stock No.: 719-470Brand: STMicroelectronicsManufacturers Part No.: SCT025W120G3-4
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.7V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.1 mm

Length

15.9mm

Height

25.27mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
View all in MOSFETs

Stock information temporarily unavailable.

BD 8.057

BD 8.057 Each (Exc. Vat)

BD 8.863

BD 8.863 Each (inc. VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

1

Available in multiples of 1
1BD 8.057
2BD 16.114
3BD 24.171
4BD 32.228
5BD 39.748
6BD 47.697
7BD 55.647
8BD 63.596
9BD 71.546
10BD 79.496
11BD 87.445
12BD 95.395
13BD 103.344
14BD 111.294
15BD 119.243

BD 8.057

BD 8.057 Each (Exc. Vat)

BD 8.863

BD 8.863 Each (inc. VAT)

STMicroelectronics Sct N channel-Channel Power MOSFET, 56 A, 1200 V Enhancement, 4-Pin Hip-247-4 SCT025W120G3-4

Stock information temporarily unavailable.

1

Available in multiples of 1
1BD 8.057
2BD 16.114
3BD 24.171
4BD 32.228
5BD 39.748
6BD 47.697
7BD 55.647
8BD 63.596
9BD 71.546
10BD 79.496
11BD 87.445
12BD 95.395
13BD 103.344
14BD 111.294
15BD 119.243

QuantityUnit price
1 - 4BD 8.057
5+BD 7.950

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247-4

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Forward Voltage Vf

2.7V

Typical Gate Charge Qg @ Vgs

73nC

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

5.1 mm

Length

15.9mm

Height

25.27mm

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more