Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
1200 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
BD 16.550
BD 16.550 Each (Exc. Vat)
BD 18.205
BD 18.205 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 56 A, 1200 V, 4-Pin HiP247-4 SCT025W120G3-4AG
1
BD 16.550
BD 16.550 Each (Exc. Vat)
BD 18.205
BD 18.205 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 56 A, 1200 V, 4-Pin HiP247-4 SCT025W120G3-4AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 16.550 |
| 5+ | BD 16.318 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
56 A
Maximum Drain Source Voltage
1200 V
Package Type
HiP247-4
Series
SCT
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China


