STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 7-Pin H2PAK-7 SCT027H65G3AG
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
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BD 7,881.500
BD 7.882 Each (On a Reel of 1000) (Exc. Vat)
BD 8,669.650
BD 8.670 Each (On a Reel of 1000) (inc. VAT)
1000
BD 7,881.500
BD 7.882 Each (On a Reel of 1000) (Exc. Vat)
BD 8,669.650
BD 8.670 Each (On a Reel of 1000) (inc. VAT)
1000
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
H²PAK-7
Mounting Type
Surface Mount
Pin Count
7
Channel Mode
Enhancement
Number of Elements per Chip
1
Transistor Material
SiC
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products