STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

RS Stock No.: 214-955Brand: STMicroelectronicsManufacturers Part No.: SCT027H65G3AG
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Forward Voltage Vf

2.9V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

BD 9.712

BD 9.712 Each (Exc. Vat)

BD 10.683

BD 10.683 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 9.712
2BD 19.425
3BD 29.137
4BD 38.849
5BD 48.562
6BD 58.274
7BD 67.986
8BD 77.699
9BD 87.411
10BD 87.406
11BD 96.146
12BD 104.887
13BD 113.627
14BD 122.368
15BD 131.108

BD 9.712

BD 9.712 Each (Exc. Vat)

BD 10.683

BD 10.683 Each (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 650 V Enhancement, 7-Pin H2PAK-7

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 9.712
2BD 19.425
3BD 29.137
4BD 38.849
5BD 48.562
6BD 58.274
7BD 67.986
8BD 77.699
9BD 87.411
10BD 87.406
11BD 96.146
12BD 104.887
13BD 113.627
14BD 122.368
15BD 131.108

QuantityUnit price
1 - 9BD 9.712
10 - 99BD 8.741
100+BD 8.057

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48.6nC

Forward Voltage Vf

2.9V

Maximum Operating Temperature

175°C

Width

10.4 mm

Height

4.8mm

Length

15.25mm

Standards/Approvals

RoHS, AEC-Q101

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more