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STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG

RS Stock No.: 215-228Brand: STMicroelectronicsManufacturers Part No.: SCT027W65G3-4AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

BD 271.425

BD 9.048 Each (In a Tube of 30) (Exc. Vat)

BD 298.567

BD 9.953 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG

30

Available in multiples of 30
30BD 271.425
60BD 542.850
90BD 814.275
120BD 1,085.700
150BD 1,357.125
180BD 1,628.550
210BD 1,899.975
240BD 2,171.400
270BD 2,442.825
300BD 2,714.250
330BD 2,985.675
360BD 3,257.100
390BD 3,528.525
420BD 3,799.950
450BD 4,071.375

BD 271.425

BD 9.048 Each (In a Tube of 30) (Exc. Vat)

BD 298.567

BD 9.953 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCT SiC N-Channel MOSFET, 60 A, 650 V, 4-Pin HiP247-4 SCT027W65G3-4AG
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 271.425
60BD 542.850
90BD 814.275
120BD 1,085.700
150BD 1,357.125
180BD 1,628.550
210BD 1,899.975
240BD 2,171.400
270BD 2,442.825
300BD 2,714.250
330BD 2,985.675
360BD 3,257.100
390BD 3,528.525
420BD 3,799.950
450BD 4,071.375

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

650 V

Series

SCT

Package Type

HiP247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more