Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China
Stock information temporarily unavailable.
BD 8.596
BD 8.596 Each (Exc. Vat)
BD 9.456
BD 9.456 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4AG
1
BD 8.596
BD 8.596 Each (Exc. Vat)
BD 9.456
BD 9.456 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 650 V, 4-Pin HiP247-4 SCT040W65G3-4AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 8.596 |
| 5+ | BD 8.476 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Series
SCT
Package Type
HiP247-4
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
China


