STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

RS Stock No.: 214-960Brand: STMicroelectronicsManufacturers Part No.: SCT070H120G3-7
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

224W

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

15.25mm

Standards/Approvals

RoHS

Country of Origin

China

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Stock information temporarily unavailable.

BD 5,401.000

BD 5.401 Each (On a Reel of 1000) (Exc. Vat)

BD 5,941.100

BD 5.941 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

1000

Available in multiples of 1000
1000BD 5,401.000
2000BD 10,802.000
3000BD 16,203.000
4000BD 21,604.000
5000BD 27,005.000
6000BD 32,406.000
7000BD 37,807.000
8000BD 43,208.000
9000BD 48,609.000
10000BD 54,010.000
11000BD 59,411.000
12000BD 64,812.000
13000BD 70,213.000
14000BD 75,614.000
15000BD 81,015.000

BD 5,401.000

BD 5.401 Each (On a Reel of 1000) (Exc. Vat)

BD 5,941.100

BD 5.941 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000BD 5,401.000
2000BD 10,802.000
3000BD 16,203.000
4000BD 21,604.000
5000BD 27,005.000
6000BD 32,406.000
7000BD 37,807.000
8000BD 43,208.000
9000BD 48,609.000
10000BD 54,010.000
11000BD 59,411.000
12000BD 64,812.000
13000BD 70,213.000
14000BD 75,614.000
15000BD 81,015.000

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

224W

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

15.25mm

Standards/Approvals

RoHS

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more