Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Package Type
H²PAK-7
Series
SCT
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
Italy
Stock information temporarily unavailable.
BD 8.162
BD 8.162 Each (Exc. Vat)
BD 8.978
BD 8.978 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
1
BD 8.162
BD 8.162 Each (Exc. Vat)
BD 8.978
BD 8.978 Each (inc. VAT)
STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 1200 V, 7-Pin H2PAK-7 SCT070H120G3AG
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
| Quantity | Unit price |
|---|---|
| 1 - 4 | BD 8.162 |
| 5+ | BD 8.052 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
1200 V
Package Type
H²PAK-7
Series
SCT
Mounting Type
Through Hole
Pin Count
7
Channel Mode
Enhancement
Transistor Material
SiC
Country of Origin
Italy


