STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

RS Stock No.: 201-4415Brand: STMicroelectronicsManufacturers Part No.: SCT20N120H
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

BD 6,303.000

BD 6.303 Each (On a Reel of 1000) (Exc. Vat)

BD 6,933.300

BD 6.933 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

1000

Available in multiples of 1000
1000BD 6,303.000
2000BD 12,606.000
3000BD 18,909.000
4000BD 25,212.000
5000BD 31,515.000
6000BD 37,818.000
7000BD 44,121.000
8000BD 50,424.000
9000BD 56,727.000
10000BD 63,030.000
11000BD 69,333.000
12000BD 75,636.000
13000BD 81,939.000
14000BD 88,242.000
15000BD 94,545.000

BD 6,303.000

BD 6.303 Each (On a Reel of 1000) (Exc. Vat)

BD 6,933.300

BD 6.933 Each (On a Reel of 1000) (inc. VAT)

STMicroelectronics SiC MOSFET Type N-Channel MOSFET, 20 A, 1200 V Enhancement, 3-Pin H2PAK-2

Stock information temporarily unavailable.

1000

Available in multiples of 1000
1000BD 6,303.000
2000BD 12,606.000
3000BD 18,909.000
4000BD 25,212.000
5000BD 31,515.000
6000BD 37,818.000
7000BD 44,121.000
8000BD 50,424.000
9000BD 56,727.000
10000BD 63,030.000
11000BD 69,333.000
12000BD 75,636.000
13000BD 81,939.000
14000BD 88,242.000
15000BD 94,545.000

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-2

Series

SiC MOSFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

203mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.7 mm

Length

15.8mm

Height

10.4mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more