Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 10.667
BD 10.667 Each (Exc. Vat)
BD 11.734
BD 11.734 Each (inc. VAT)
Standard
1
BD 10.667
BD 10.667 Each (Exc. Vat)
BD 11.734
BD 11.734 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
45A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
100mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
270W
Maximum Gate Source Voltage Vgs
25 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
105nC
Forward Voltage Vf
3.5V
Maximum Operating Temperature
200°C
Width
5.15 mm
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel Silicon Carbide (SiC) MOSFET, STMicroelectronics
Silicon carbide (SiC) MOSFETs feature very low static drain-source on-resistance for the 1200V rating combined with excellent switching performance, translating into more efficient and compact systems.


