STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7

RS Stock No.: 201-0869Brand: STMicroelectronicsManufacturers Part No.: SCTH90N65G2V-7
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Series

SCTH90

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

484W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

175°C

Width

4.8 mm

Height

10.4mm

Length

15.25mm

Standards/Approvals

No

Automotive Standard

No

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Stock information temporarily unavailable.

BD 15.312

BD 15.312 Each (Exc. Vat)

BD 16.843

BD 16.843 Each (inc. VAT)

STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 15.312
2BD 30.623
3BD 45.934
4BD 61.246
5BD 76.558
6BD 91.869
7BD 107.180
8BD 122.492
9BD 137.804
10BD 153.115
11BD 168.426
12BD 183.738
13BD 199.050
14BD 214.361
15BD 229.672

BD 15.312

BD 15.312 Each (Exc. Vat)

BD 16.843

BD 16.843 Each (inc. VAT)

STMicroelectronics SCTH90 Type N-Channel MOSFET, 116 A, 650 V Enhancement, 7-Pin H2PAK SCTH90N65G2V-7

Stock information temporarily unavailable.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 15.312
2BD 30.623
3BD 45.934
4BD 61.246
5BD 76.558
6BD 91.869
7BD 107.180
8BD 122.492
9BD 137.804
10BD 153.115
11BD 168.426
12BD 183.738
13BD 199.050
14BD 214.361
15BD 229.672

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

116A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK

Series

SCTH90

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

484W

Maximum Gate Source Voltage Vgs

22 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

157nC

Maximum Operating Temperature

175°C

Width

4.8 mm

Height

10.4mm

Length

15.25mm

Standards/Approvals

No

Automotive Standard

No

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more