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SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG

RS Stock No.: 202-5485Brand: STMicroelectronicsManufacturers Part No.: SCTW100N65G2AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 416.550

BD 13.885 Each (In a Tube of 30) (Exc. Vat)

BD 458.205

BD 15.273 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG

30

Available in multiples of 30
30BD 416.550
60BD 833.100
90BD 1,249.650
120BD 1,666.200
150BD 2,082.750
180BD 2,499.300
210BD 2,915.850
240BD 3,332.400
270BD 3,748.950
300BD 4,165.500
330BD 4,582.050
360BD 4,998.600
390BD 5,415.150
420BD 5,831.700
450BD 6,248.250

BD 416.550

BD 13.885 Each (In a Tube of 30) (Exc. Vat)

BD 458.205

BD 15.273 Each (In a Tube of 30) (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 416.550
60BD 833.100
90BD 1,249.650
120BD 1,666.200
150BD 2,082.750
180BD 2,499.300
210BD 2,915.850
240BD 3,332.400
270BD 3,748.950
300BD 4,165.500
330BD 4,582.050
360BD 4,998.600
390BD 5,415.150
420BD 5,831.700
450BD 6,248.250

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more