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SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG

RS Stock No.: 202-5486Brand: STMicroelectronicsManufacturers Part No.: SCTW100N65G2AG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 14.385

BD 14.385 Each (Exc. Vat)

BD 15.823

BD 15.823 Each (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 14.385
2BD 28.770
3BD 43.155
4BD 57.540
5BD 71.925
6BD 86.310
7BD 100.695
8BD 115.080
9BD 129.465
10BD 143.850
11BD 158.235
12BD 172.620
13BD 187.005
14BD 201.390
15BD 215.775

BD 14.385

BD 14.385 Each (Exc. Vat)

BD 15.823

BD 15.823 Each (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 14.385
2BD 28.770
3BD 43.155
4BD 57.540
5BD 71.925
6BD 86.310
7BD 100.695
8BD 115.080
9BD 129.465
10BD 143.850
11BD 158.235
12BD 172.620
13BD 187.005
14BD 201.390
15BD 215.775

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

H²PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more