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SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG

RS Stock No.: 202-5490Brand: STMicroelectronicsManufacturers Part No.: SCTW40N120G2VAG
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

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BD 9.210

BD 9.210 Each (Exc. Vat)

BD 10.131

BD 10.131 Each (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 9.210
2BD 18.420
3BD 27.630
4BD 36.840
5BD 45.850
6BD 55.020
7BD 64.190
8BD 73.360
9BD 82.530
10BD 87.500
11BD 96.250
12BD 105.000
13BD 113.750
14BD 122.500
15BD 131.250

BD 9.210

BD 9.210 Each (Exc. Vat)

BD 10.131

BD 10.131 Each (inc. VAT)

SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 3-Pin HiP247 STMicroelectronics SCTW40N120G2VAG
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 9.210
2BD 18.420
3BD 27.630
4BD 36.840
5BD 45.850
6BD 55.020
7BD 64.190
8BD 73.360
9BD 82.530
10BD 87.500
11BD 96.250
12BD 105.000
13BD 113.750
14BD 122.500
15BD 131.250

Buy in bulk

quantityUnit price
1 - 4BD 9.210
5 - 9BD 9.170
10+BD 8.750

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

33 A

Maximum Drain Source Voltage

1200 V

Series

SCT

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.105 Ω

Channel Mode

Depletion

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more