SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V

RS Stock No.: 201-0887Brand: STMicroelectronicsManufacturers Part No.: SCTW90N65G2V
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

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BD 14.190

Each (Exc. Vat)

BD 15.609

Each (Including VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 14.190
2BD 28.380
3BD 42.570
4BD 56.760
5BD 66.675
6BD 80.010
7BD 93.345
8BD 106.680
9BD 120.015
10BD 126.300
11BD 138.930
12BD 151.560
13BD 164.190
14BD 176.820
15BD 189.450

BD 14.190

Each (Exc. Vat)

BD 15.609

Each (Including VAT)

SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 STMicroelectronics SCTW90N65G2V
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1BD 14.190
2BD 28.380
3BD 42.570
4BD 56.760
5BD 66.675
6BD 80.010
7BD 93.345
8BD 106.680
9BD 120.015
10BD 126.300
11BD 138.930
12BD 151.560
13BD 164.190
14BD 176.820
15BD 189.450

Buy in bulk

quantityUnit price
1 - 4BD 14.190
5 - 9BD 13.335
10 - 24BD 12.630
25 - 49BD 11.915
50+BD 11.350

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

119 A

Maximum Drain Source Voltage

650 V

Package Type

Hip247

Series

SCTW90

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.024 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more