STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

RS Stock No.: 204-3957Brand: STMicroelectronicsManufacturers Part No.: SCTWA35N65G2V
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Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

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Stock information temporarily unavailable.

BD 214.665

BD 7.156 Each (In a Tube of 30) (Exc. Vat)

BD 236.131

BD 7.872 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

30

Available in multiples of 30
30BD 214.665
60BD 429.330
90BD 643.995
120BD 858.660
150BD 1,073.325
180BD 1,287.990
210BD 1,502.655
240BD 1,717.320
270BD 1,931.985
300BD 2,146.650
330BD 2,361.315
360BD 2,575.980
390BD 2,790.645
420BD 3,005.310
450BD 3,219.975

BD 214.665

BD 7.156 Each (In a Tube of 30) (Exc. Vat)

BD 236.131

BD 7.872 Each (In a Tube of 30) (inc. VAT)

STMicroelectronics SCTWA35N65G2V SiC N-Channel SiC Power Module, 45 A, 650 V, 3-Pin HiP247 SCTWA35N65G2V

Stock information temporarily unavailable.

30

Available in multiples of 30
30BD 214.665
60BD 429.330
90BD 643.995
120BD 858.660
150BD 1,073.325
180BD 1,287.990
210BD 1,502.655
240BD 1,717.320
270BD 1,931.985
300BD 2,146.650
330BD 2,361.315
360BD 2,575.980
390BD 2,790.645
420BD 3,005.310
450BD 3,219.975

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Series

SCTWA35N65G2V

Package Type

Hip247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.072 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.2V

Number of Elements per Chip

1

Transistor Material

SiC

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more