Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 8.497
BD 1.699 Each (In a Pack of 5) (Exc. Vat)
BD 9.347
BD 1.869 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 8.497
BD 1.699 Each (In a Pack of 5) (Exc. Vat)
BD 9.347
BD 1.869 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 1.699 | BD 8.497 |
| 10 - 95 | BD 1.497 | BD 7.485 |
| 100 - 495 | BD 1.237 | BD 6.185 |
| 500+ | BD 1.087 | BD 5.433 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified


