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N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2

RS Stock No.: 792-5707Brand: STMicroelectronicsManufacturers Part No.: STB18N60M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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BD 4.700

BD 0.940 Each (In a Pack of 5) (Exc. Vat)

BD 5.170

BD 1.034 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2
Select packaging type

BD 4.700

BD 0.940 Each (In a Pack of 5) (Exc. Vat)

BD 5.170

BD 1.034 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 13 A, 650 V, 3-Pin D2PAK STMicroelectronics STB18N60M2
Stock information temporarily unavailable.
Select packaging type

Buy in bulk

quantityUnit pricePer Pack
5 - 20BD 0.940BD 4.700
25 - 45BD 0.890BD 4.450
50 - 120BD 0.810BD 4.050
125 - 245BD 0.745BD 3.725
250+BD 0.715BD 3.575

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

21.5 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more