STMicroelectronics MDmesh M2 N-Channel MOSFET, 4.5 A, 650 V, 3-Pin D2PAK STB6N60M2
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.35mm
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
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BD 3.712
BD 0.742 Each (In a Pack of 5) (Exc. Vat)
BD 4.083
BD 0.816 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.712
BD 0.742 Each (In a Pack of 5) (Exc. Vat)
BD 4.083
BD 0.816 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.742 | BD 3.712 |
| 25 - 45 | BD 0.710 | BD 3.548 |
| 50 - 120 | BD 0.644 | BD 3.218 |
| 125 - 245 | BD 0.588 | BD 2.942 |
| 250+ | BD 0.566 | BD 2.832 |
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Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
650 V
Series
MDmesh M2
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.2 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
8 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.35mm
Product details
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products