Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
STripFET F3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
10.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
Please check again later.
BD 185.000
BD 0.185 Each (On a Reel of 1000) (Exc. Vat)
BD 203.500
BD 0.203 Each (On a Reel of 1000) (inc. VAT)
1000
BD 185.000
BD 0.185 Each (On a Reel of 1000) (Exc. Vat)
BD 203.500
BD 0.203 Each (On a Reel of 1000) (inc. VAT)
1000
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
STripFET F3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
10.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.