Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Transistor Material
Si
Width
6.2mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
BD 577.500
BD 0.231 Each (On a Reel of 2500) (Exc. Vat)
BD 635.250
BD 0.254 Each (On a Reel of 2500) (inc. VAT)
2500
BD 577.500
BD 0.231 Each (On a Reel of 2500) (Exc. Vat)
BD 635.250
BD 0.254 Each (On a Reel of 2500) (inc. VAT)
2500
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Series
STripFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
6.6mm
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Transistor Material
Si
Width
6.2mm
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details


