Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 3.878
BD 0.776 Each (In a Pack of 5) (Exc. Vat)
BD 4.266
BD 0.854 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 3.878
BD 0.776 Each (In a Pack of 5) (Exc. Vat)
BD 4.266
BD 0.854 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | BD 0.776 | BD 3.878 |
| 25 - 45 | BD 0.737 | BD 3.685 |
| 50 - 120 | BD 0.671 | BD 3.355 |
| 125 - 245 | BD 0.610 | BD 3.052 |
| 250+ | BD 0.594 | BD 2.970 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
17A
Maximum Drain Source Voltage Vds
250V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
165mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
29.5nC
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Width
6.2 mm
Length
6.6mm
Standards/Approvals
No
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


