Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 4.538
BD 0.908 Each (In a Pack of 5) (Exc. Vat)
BD 4.992
BD 0.999 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 4.538
BD 0.908 Each (In a Pack of 5) (Exc. Vat)
BD 4.992
BD 0.999 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 0.908 | BD 4.538 |
| 10 - 20 | BD 0.770 | BD 3.850 |
| 25 - 95 | BD 0.742 | BD 3.712 |
| 100 - 495 | BD 0.605 | BD 3.025 |
| 500+ | BD 0.561 | BD 2.805 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
25A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
35mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
16 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
38nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Length
6.6mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


