Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 5.005
BD 1.001 Each (In a Pack of 5) (Exc. Vat)
BD 5.505
BD 1.101 Each (In a Pack of 5) (inc. VAT)
Standard
5
BD 5.005
BD 1.001 Each (In a Pack of 5) (Exc. Vat)
BD 5.505
BD 1.101 Each (In a Pack of 5) (inc. VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | BD 1.001 | BD 5.005 |
| 10 - 95 | BD 0.858 | BD 4.290 |
| 100 - 495 | BD 0.644 | BD 3.218 |
| 500 - 995 | BD 0.556 | BD 2.778 |
| 1000+ | BD 0.451 | BD 2.255 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-252
Series
STripFET II
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
16mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
49nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Maximum Operating Temperature
175°C
Length
6.6mm
Standards/Approvals
No
Width
6.2 mm
Height
2.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


