STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4

RS Stock No.: 719-650Brand: STMicroelectronicsManufacturers Part No.: STD70N10F4
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STP

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

0.0195Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.6 mm

Length

6.2mm

Height

2.4mm

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View all in MOSFETs

Stock information temporarily unavailable.

BD 0.474

BD 0.474 Each (Exc. Vat)

BD 0.521

BD 0.521 Each (inc. VAT)

STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4

1

Available in multiples of 1
1BD 0.474
2BD 0.948
3BD 1.422
4BD 1.896
5BD 2.370
6BD 2.844
7BD 3.318
8BD 3.792
9BD 4.266
10BD 4.740
11BD 5.214
12BD 5.688
13BD 6.161
14BD 6.635
15BD 7.109

BD 0.474

BD 0.474 Each (Exc. Vat)

BD 0.521

BD 0.521 Each (inc. VAT)

STMicroelectronics STP N channel-Channel Power MOSFET, 60 A, 100 V Enhancement, 2-Pin TO-252 STD70N10F4

Stock information temporarily unavailable.

1

Available in multiples of 1
1BD 0.474
2BD 0.948
3BD 1.422
4BD 1.896
5BD 2.370
6BD 2.844
7BD 3.318
8BD 3.792
9BD 4.266
10BD 4.740
11BD 5.214
12BD 5.688
13BD 6.161
14BD 6.635
15BD 7.109

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

Power MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-252

Series

STP

Mount Type

Surface Mount

Pin Count

2

Maximum Drain Source Resistance Rds

0.0195Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Operating Temperature

175°C

Width

6.6 mm

Length

6.2mm

Height

2.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more