Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Series
MDmesh, SuperMESH
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
307.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Height
9.1mm
Length
38.2mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 174.020
BD 17.402 Each (In a Tube of 10) (Exc. Vat)
BD 191.422
BD 19.142 Each (In a Tube of 10) (inc. VAT)
10
BD 174.020
BD 17.402 Each (In a Tube of 10) (Exc. Vat)
BD 191.422
BD 19.142 Each (In a Tube of 10) (inc. VAT)
Stock information temporarily unavailable.
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | BD 17.402 | BD 174.020 |
| 50 - 90 | BD 16.617 | BD 166.166 |
| 100 - 190 | BD 14.650 | BD 146.504 |
| 200 - 490 | BD 13.679 | BD 136.786 |
| 500+ | BD 12.701 | BD 127.012 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Series
MDmesh, SuperMESH
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
307.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Height
9.1mm
Length
38.2mm
Standards/Approvals
No
Automotive Standard
No
Product details


