Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Series
MDmesh, SuperMESH
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
307.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Height
9.1mm
Length
38.2mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
BD 178.024
BD 17.802 Each (In a Tube of 10) (Exc. Vat)
BD 195.826
BD 19.582 Each (In a Tube of 10) (inc. VAT)
10
BD 178.024
BD 17.802 Each (In a Tube of 10) (Exc. Vat)
BD 195.826
BD 19.582 Each (In a Tube of 10) (inc. VAT)
Stock information temporarily unavailable.
10
| Quantity | Unit price | Per Tube |
|---|---|---|
| 10 - 40 | BD 17.802 | BD 178.024 |
| 50 - 90 | BD 16.999 | BD 169.990 |
| 100 - 190 | BD 14.988 | BD 149.875 |
| 200 - 490 | BD 13.993 | BD 139.934 |
| 500+ | BD 12.993 | BD 129.934 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
40A
Maximum Drain Source Voltage Vds
600V
Package Type
ISOTOP
Series
MDmesh, SuperMESH
Mount Type
Panel
Pin Count
4
Maximum Drain Source Resistance Rds
130mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
460W
Maximum Gate Source Voltage Vgs
±30 V
Minimum Operating Temperature
-65°C
Typical Gate Charge Qg @ Vgs
307.5nC
Forward Voltage Vf
1.3V
Maximum Operating Temperature
150°C
Width
25.5 mm
Height
9.1mm
Length
38.2mm
Standards/Approvals
No
Automotive Standard
No
Product details


