STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

RS Stock No.: 103-1568Brand: STMicroelectronicsManufacturers Part No.: STE40NC60
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

307.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Height

9.1mm

Length

38.2mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 158.878

BD 15.888 Each (In a Tube of 10) (Exc. Vat)

BD 174.766

BD 17.477 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

10

Available in multiples of 10
10BD 158.878
20BD 317.756
30BD 476.634
40BD 635.512
50BD 758.512
60BD 910.215
70BD 1,061.918
80BD 1,213.620
90BD 1,365.322
100BD 1,337.920
110BD 1,471.712
120BD 1,605.504
130BD 1,739.296
140BD 1,873.088
150BD 2,006.880

BD 158.878

BD 15.888 Each (In a Tube of 10) (Exc. Vat)

BD 174.766

BD 17.477 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Stock information temporarily unavailable.

10

Available in multiples of 10
10BD 158.878
20BD 317.756
30BD 476.634
40BD 635.512
50BD 758.512
60BD 910.215
70BD 1,061.918
80BD 1,213.620
90BD 1,365.322
100BD 1,337.920
110BD 1,471.712
120BD 1,605.504
130BD 1,739.296
140BD 1,873.088
150BD 2,006.880

QuantityUnit pricePer Tube
10 - 40BD 15.888BD 158.878
50 - 90BD 15.170BD 151.702
100 - 190BD 13.379BD 133.792
200 - 490BD 12.566BD 125.656
500+BD 11.848BD 118.480

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Typical Gate Charge Qg @ Vgs

307.5nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Height

9.1mm

Length

38.2mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more