STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

RS Stock No.: 103-1568Brand: STMicroelectronicsManufacturers Part No.: STE40NC60
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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

BD 154.660

BD 15.466 Each (In a Tube of 10) (Exc. Vat)

BD 170.126

BD 17.013 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

10

Available in multiples of 10
10BD 154.660
20BD 309.320
30BD 463.980
40BD 618.640
50BD 738.375
60BD 886.050
70BD 1,033.725
80BD 1,181.400
90BD 1,329.075
100BD 1,307.900
110BD 1,438.690
120BD 1,569.480
130BD 1,700.270
140BD 1,831.060
150BD 1,961.850

BD 154.660

BD 15.466 Each (In a Tube of 10) (Exc. Vat)

BD 170.126

BD 17.013 Each (In a Tube of 10) (inc. VAT)

STMicroelectronics Type N-Channel MOSFET, 40 A, 600 V Enhancement, 4-Pin ISOTOP

Stock information temporarily unavailable.

10

Available in multiples of 10
10BD 154.660
20BD 309.320
30BD 463.980
40BD 618.640
50BD 738.375
60BD 886.050
70BD 1,033.725
80BD 1,181.400
90BD 1,329.075
100BD 1,307.900
110BD 1,438.690
120BD 1,569.480
130BD 1,700.270
140BD 1,831.060
150BD 1,961.850

QuantityUnit pricePer Tube
10 - 40BD 15.466BD 154.660
50 - 90BD 14.768BD 147.675
100 - 190BD 13.079BD 130.790
200 - 490BD 12.402BD 124.025
500+BD 11.693BD 116.930

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Technical Document

Specifications

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

600V

Package Type

ISOTOP

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

307.5nC

Maximum Power Dissipation Pd

460W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-65°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Width

25.5 mm

Length

38.2mm

Height

9.1mm

Standards/Approvals

No

Automotive Standard

No

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more